Achievement of High-Speed Growth of High-Purity β-Gallium Oxide Films by Metalorganic Vapor Phase Epitaxy
October 11, 2023
Professor Yoshinao Kumagai and Assistant Professor Ken Goto of Division of Applied Chemistry, Institute of Engineering, Tokyo University of Agriculture and Technology (President: Kazuhiro Chiba) and Assistant Professor Shogo Sasaki of the University's FLOuRISH Institute, in collaboration with Mr. Junya Yoshinaga, Mr. Guanxi Piao, and Dr. Kazutada Ikenaga of CSE Department, Innovation Unit, Taiyo Nippon Sanso Corporation (President: Kenji Nagata), and Dr. Yuzaburo Ban, Fellow of Taiyo Nippon Sanso CSE Ltd. (President: Takashi Aida), have achieved the high-speed growth of high-purity β-gallium oxide (β-Ga2O3) thick films using the metalorganic vapor phase epitaxy (MOVPE) method, which has been considered difficult. β-Ga2O3 is attracting attention as an important semiconductor for next-generation power devices, which are essential for increasing the efficiency of power control and conversion systems. This achievement is expected to lead to the practical application of mass production technology for β-Ga2O3 power devices for the realization of an energy-saving society in the future.
The research results have been published online in the English-language journal Applied Physics Express (APEX) on September 28.
Title of paper: High-speed growth of thick high-purity β-Ga2O3 layers by low-pressure hot-wall metalorganic vapor phase epitaxy
- Contact information for inquiries about the research
Professor Yoshinao Kumagai
Division of Applied Chemistry, Institute of Engineering, Tokyo University of Agriculture and Technology
Mr. Junya Yoshinaga
CSE Department, Innovation Unit, Taiyo Nippon Sanso Corporation
Dr. Yuzaburo Ban
Taiyo Nippon Sanso CSE Ltd.