Advanced measurement technology for future semiconductor devices　– Terahertz time domain spectroscopy for ultra-high frequency response of gallium oxide –

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January 26, 2021

1.Presenters

Makoto Nakajima (Associate Professor, Institute of Laser Engineering, Osaka University)
Verdad C. Agulto (PhD Student, Division of Sustainable Energy and Environmental Engineering, Graduate School of Engineering, Osaka University)
Valynn Katrine Mag-usara (Specially Appointed Researcher, Institute of Laser Engineering, Osaka University)
Toshiyuki Iwamoto (Subleader, Terahertz Project, Nippo Precision Co., Ltd.)
Yoshinao Kumagai (Professor, Division of Applied Chemistry, Institute of Engineering, Tokyo University of Agriculture and Technology)
Hisashi Murakami (Associate Professor, Division of Applied Chemistry, Institute of Engineering, Tokyo University of Agriculture and Technology)
Ken Goto (Assistant Professor, Division of Applied Chemistry, Institute of Engineering, Tokyo University of Agriculture and Technology)

2.Key points of the work

• An emerging semiconductor for future power devices, beta-gallium oxide (β-Ga₂O₃), was investigated using a technique called transmission terahertz time-domain spectroscopy (THz-TDS) for the first time
• The findings on the fundamental properties of β-Ga₂O₃ at THz frequencies are significant to the development of this semiconductor’s power electronic applications
• THz-TDS can be used as a noninvasive tool for the evaluation of electrical properties instead of conventional electrical measurements that degrade the semiconductor quality

• Press release (PDF:765KB)