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E-mail: urac[at]ml.tuat.ac.jp(Please replace [at] with @)
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MURAKAMI Hisashi

Institute of Engineering　Division of Applied Chemistry, Professor

E-mail address

faifai[at]cc.tuat.ac.jp(Please convert "[at]" to "@".)

We are promoting research and development on wide bandgap semiconductor materials (GaN, Ga2O3, AlN, InGaN alloy crystal, etc.) for the next and subsequent generations of energy conversion devices, so-called power devices. We are exploring methods to grow semiconductor crystals of high purity and high quality at high speed by vapor phase growth using metal chlorides as a precursor, aiming to contribute to solving future energy issues and carbon neutral. Specifically, we are efficiently developing new semiconductor materials and promoting research through the prediction of crystal growth behavior based on thermodynamics, the design of reactors using CFD calculations, and the construction and growth experiments of crystal growth apparatuses based on the theoretical predictions.