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W. Stambouli, H. Elhouichet, B. Gelloz, M. Férid, and N. Koshida: " Energy transfer induced Eu3+ photoluminescence enhancement in tellurite glass" J. Lumin.(2011) (accepted for publication). |
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H. Sugimoto, S. Okabe, M. Kato, N. Koshida, T. Shiroishi, K. Mogi, T. Kikusui, T. Koide: "A role for strain differences in waveforms of ultrasonic vocalizations during male–female interaction" PLoS One 6 e22093/1-10 (2011). |
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T. Ohta, B. Gelloz, and N. Koshida: " Multilayered thin metal films deposition by sequential operation of nanosilicon electron emitter in metal-salt solution" Jpn. J. Appl. Phys. 50 (2011) (in press). |
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N. Mori, H. Minari, S. Uno, H. Mizuta, and
N. Koshida: " Theory of quasi-ballistic transport through nanocrystalline silicon dots" Appl. Phys. Lett. 98 (2011) (accepted for publication). |
| T. Ohta, B. Gelloz, and N. Koshida: " Counter-electrode-free thin Cu film deposition based on ballistic electron injection into CuSO4 solution from nanosilicon emitter" Jpn. J. Appl. Phys. STAP, 50 010104/1-4 (2011). |
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B. Gelloz, N. Harima, H. Koyama, H. Elhouichet, and N. Koshida: " Energy transfer from phosphorescent blue-emitting oxidized porous silicon to rhodamine 110" Appl. Phys. Lett. 97 171107/1-3 (2010). |
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M. Fujita, B. Gelloz, N. Koshida, and S. Noda: " Reduction of surface recombination and enhancement of light emission in silicon photonic crystals treated by high-pressure water vapor annealing" Appl. Phys. Lett. 97 121111/1-3 (2010). |
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B. Gelloz, M. Mentek, T. Djenizian, F. Dumur, L. Jin, and N. Koshida: " Electropolymerization of Poly(para-phenylene)vinylene Films onto and inside Porous Si Layers of Different Types and Morphologies" J. Electrochem. Soc. 157(12) D648-D655(2010). |
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S. Okabe, M. Nagasawa, T. Kihara, M. Kato, T. Harada, N. Koshida, K.
Mogi, and T. Kikusui: " The Effects of Social Experience and Gonadal Hormones on Retrieving Behavior of Mice and their Responses to Pup Ultrasonic Vocalizations" Zoological Science 27(10) 790-795 (2010). |
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T. Ohta, B. Gelloz, N. Koshida: " Thin Cu film deposition by operation of nanosilicon ballistic electron emitter in solution" Electrochemical and Solid-State Letters13(10) D73-D75 (2010). |
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B. Gelloz and N. Koshida: " Stabilization and operation of porous silicon photonic structures from near-ultraviolet to near-infrared using high-pressure water vapor annealing" Thin Solid Films 518(12) 3276-3279 (2010). |
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R. Mentek, B. Gelloz, N.and Koshida: " Fabrication and Optical Characterization of Self-standing Wide-gap Nanocrystalline Silicon Layers" Jpn. J. Appl. Phys. 49 04DG22-1-04DG22-3 (2010). |
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T. Nakada, T. Sato, Y. Matsuba, K. Sakemura,Y. Okuda, N. Negishi, A. Watanabe, T. Yoshikawa, K. Ogasawara,
M. Nanba, K. Tanioka, N. Egami, A. Kobayashi, and N. Koshida: " 2/3-inch ultra-high-sensitivity image sensor with active-matrix high-efficiency electron emission device" J. Vac. Sci. Technol. B 28 C2D11-15 (2010). |
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Y. Hirano, M. Nanba, N. Egami, S. Yamazaki and N. Koshida: " Development of dry-processed silicon nano-dot planar cold cathode and its electron emission properties" J. Vac. Sci. Technol. B 28 C2B6-C2810 (2010). |
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T. Djenizian, B. Gelloz, F. Dumur, C. Chassigneux, L. Jin,c and N.
Koshida: " Direct Electropolymerization of Poly(para-phenylene)vinylene Films on Si and Porous Si" J. Electrochem. Soc. 157(5) H534-H539 (2010). |
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T. Ichihara, T. Hatai and N. Koshida: " Direct excitation of xenon by ballistic electrons emitted from nanocrystalline silicon planar cathode and vacuum-ultraviolet light emission" J. Soc. Information Display 18/3 223-227 (2010). |
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A. Chouket, H. Elhouichet, H. Koyama, B. Gelloz, M. Oueslati, and N.
Koshida: " Multiple energy transfer in porous silicon/Rh6G/RhB nanocomposite evidenced by photoluminescence and its polarization memory" Thin Solid Films 518 S212-S216 (2010). |
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A. Chouket, B. Gelloz, H. Koyama, H. Elhouichet1, M. Oueslati1, and N.
Koshida: " Effect of high-pressure water-vapor annealing on energy transfer in dye-impregnated porous silicon" J. Luminescence 129 1332-1335 (2009). |
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Y. Hirano, K. Okamoto, S. Yamazaki, and N. Koshida: " Avalanche multiplication of photo-carriers in nanometer-sized silicon dot layers" Appl. Phys. Lett. 95 063109 (2009). |
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D. Hippo, K. Urakawa, Y. Tsuchiya, H. Mizuta, N. Koshid, and
Shunri Oda: " Spontaneous emission control of silicon nanocrystals by silicon three-dimensional photonic crystal structure fabricated by self-aligned two-directional electrochemical etching method" Materials Chemistry and Physics 116(1) 107-111 (2009). |
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B. Gelloz and N. Koshida: "Long-lived blue phosphorescence of oxidized and annealed nanocrystalline silicon" Appl. Phys. Lett． 94 201903-05 (2009). |
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B. Gelloz, R. Mentek and N. Koshida: "Specific Blue Light Emission from Nanocrystalline Porous Si Treated by High Pressure Water Vapor Annealing" Jpn. J. Appl. Phys. 48 04C119-1-04C119-5 (2009). |
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T. Ichihara, T. Hatai, and N. Koshida: "Vacuum-ultraviolet light emission from xenon directly excited by ballistic output electrons of nanocrystalline silicon planar cathode" J. Vac. Sci. Technol. B 28 722-774 (2009). |
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T. Nakada, T. Sato, Y. Matsuba, R. Tanaka, K. Sakemura, N. Negishi,
Y. Okuda, A. Watanabe, T. Yoshikawa, K. Ogasawara, M. Nanba, K. Tanioka,
N. Egami, and N. Koshida: "Enhanced output current density of an active-matrix high-efficiency electron emission device (HEED) array with 13.75 μm pixels" J. Vac. Sci. Technol. B 28 735-739 (2009) . |
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A Kojima, H. Ohyi, N. Koshida: "Sub-30-nm resolution parallel EB lithography based on a planar type Si nanowire array ballistic electron source: Proc. SPIE, 7271 72712N (2009), Conference on Alternative Lithographic Technologies (Tuesday 24 February 2009, San Jose, CA, USA). |
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N. Koshida, A. Asami, and B. Gelloz: "Development of efficient broadband digital acoustic device based on nanocrystalline silicon ultrasound emitter" IEDM 2008 Technical Digest 659-662 (2008). |
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B. Gelloz, K. Murata, T. Ohta, M. Ghulinyan: "Lorenzo Pavesi, D. J. Lockwood, and Nobuyoshi Koshida, Stabilization of Porous Silicon Free-Standing Coupled Optical Microcavities by Surface Chemical Modification" ECS Trans. 16 211-220 (2008). |
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B. Gelloz, M. Masunaga, T. Shirasawa, R. Mentek, T. Ohta, and N. Koshida: "Enhanced Controllability of Periodic Silicon Nanostructures by Magnetic Field Anodization" ECS Trans. 16 195-200 (2008). |
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B. Gelloz, H. Koyama and N. Koshida: "Polarization Memory of Blue and Red Luminescence from Nanocrystalline Porous Silicon Treated by High-Pressure Water Vapor Annealing" Thin Solid Films 517 376- 379 (2008). |
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D. Sakai, C. Oshima, T. Ohta, and N. Koshida: "Specific spectral features in electron emission from nanocrystalline poly-silicon quasi-ballistic cold cathode detected by an angle-resolved high resolution analyzer" J. Vac. Sci. Technol. B 26 1782- 1786 (2008). |
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A Kojima, H. Ohyi, N. Koshida: "Sub-30 nm Parallel EB Lithography using Nano-Si Planar Ballistic Electron Emitter" J. Vac. Sci. Technol. B, (2008) in press. |
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M. Ghulinyan, B. Gelloz, T. Ohta, L. Pavesi, D.J. Lockwood, and N. Koshida: "Stabilized porous silicon optical superlattices with controlled surface passivation" Appl. Phys. Lett. 93 061113-115 (2008). |
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D. Hippo, K. Urakawa, Y. Tsuchiya, H. Mizuta, N. Koshida, and S. Oda: "Formation Mechanism of 100 nm-Scale Periodic-Structures in Silicon Using Magnetic-Field-Assisted Anodization" Jpn. J. Appl. Phys. 47 7398- 7402 (2008). |
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T. Ohta, B. Gelloz, and N Koshida: "Characteristics of nanosilicon ballistic cold cathode in liquids as an active electrode" J. Vac. Sci. Technol. B26 716-719 (2008). |
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N. Negishi, T. Sato, Y. Matsuba, R. Tanaka, T. Nakada, K. Sakemura, Y. Okuda, A. Watanabe, T. Yoshikawa, and K. Ogasawara, M. Nanba, S. Okazaki, K. Tanioka, and N. Egami, and N. Koshida: "Development of a super-high sensitive image sensor using 640×480 pixel active-matrix high-efficency electrion emission device" J. Vac. Sci. Technol. B26 711-715 (2008). |
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B. Gelloz, M. Sato and N. Koshida: "Cavity Effect in Nanocrystalline Porous Silicon Ballistic Lighting Device" Jpn. J. Appl. Phys. 47 2902-2905 (2008). |
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B. Gelloz, M. Sugawara and N. Koshida: "Acoustic Wave Manipulation by Phased Operation of Two-Dimensionally Arrayed Nanocrystalline Silicon Ultrasonic Emitters" Jpn. J. Appl. Phys. 47 3123-3126 (2008). |
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Y. Hirano, S. Yamazaki, and N,i Koshida: "Improved Photoconduction Effects of Nanometer-Sized Si Dot Multilayers" Jpn. J. Appl. Phys. 47 3095-3098 (2008). |
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A. Chouket, H. Elhouichet, M. Oueslati, H. Koyama, B. Gelloz, and N. Koshida: "Energy transfer in porous-silicon/laser-dye composite evidenced by polarization memory of photoluminescence" Appl. Phys. Lett. 91 211902/1-211902/3 (2007). |
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Yoshifumi Watabe, Yoshiaki Honda, and Nobuyoshi Koshida: "Effect of Bi-layer Structure on the Long-Term Stability of Nanocrystalline Porous Silicon Ultrasonic Emitter" Jpn. J. Appl. Phys. 46 6218-6221 (2007). |
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Y. Okuda, T. Sato, Y. Matsuba, R. Tanaka, T. Nakada, K. Sakemura, N. Negishi, A. Watanabe, T. Yoshikawa, K. Ogasawara, M. Nanba*, S. Okazaki, K. Tanioka, N. Egami, A. Kobayashi, and N. Koshida: "Low Voltage and High Speed Operation of 640X480 Pixel Ac-tive-matrix HEED (High-efficiency Electron Emission Device) Array for HARP Image Sensor" Proc. Int. Display Workshop (5-8 December, 2007, Sapporo) FED1-3/6. |
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A. Uematsu, T. Kikusui, T. Kihara, T. Harada, M. Kato, K. Nakano, O. Murakami, N. Koshida, Y. Takeuchi, and Y. Mori: "Maternal approaches to pup ultrasonic vocalizations produced by a nanocrystalline silicon thermo-acoustic emitter" Brain Research 1163 91-99(2007). |
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Y. Watabe, Y. Honda and N. Koshida: "Effects of Thermal Effusivity in Nanocrystalline Porous Silicon on Long-Term Operation of Thermally Induced Ultrasonic Emissionn" Jpn. J. Appl. Phys. 46 2599-2602(2007). |
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H. Yoshimura, T. Sakaguchi, and N. Koshida: "Development of Flexible Electrochromic Device with Thin-Film Configuration" Jpn. J. Appl. Phys. 46 2458-2461(2007). |
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N. Negishi, Y. Matsuba, R. Tanaka, T. Nakada, K. Sakemura, Y. Okuda, A. Watanabe, T. Yoshikawa, K. Ogasawara, M. Nanba, S. Okazaki, K. Tanioka, N. Egami, and N. Koshida: "Development of a high-resolution active-matrix electron emitter array for application to high-sensitivity image sensing" J. Vac. Sci. Technol. B 25 661-666 (2007). |
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B. Gelloz and N. Koshida: "Highly Efficient and Stable Photoluminescene of Nanocrystalline Porous Silicon by Combination of Chemical Modification and Oxidation under High Pressure" Jpn. J. Appl. Phys. 46 2429-2433 (2007). |
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D. Hippo, K. Urakawa, Y. Kawata, Y. Tsuchiya, H. Mizuta, N. Koshida, and S. Oda: "New design principle and Fabrication Process of Silicon 3-dimensional Photonic Crystal Structures" Jpn. J. Appl. Phys. 46 633-637 (2007). |
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M. Namba, K. Miyakawa, T. Watabe, S. Okabe, K. Tanioka, N. Egami, R. Tanaka, T. Nakada, K. Sakemura, Y. Okuda, N. Negishi, A. Watanabe, T. Yoshikawa, K. Ogasawara, A. Kobayashi, K. Ogusu, N. Koshida: "1-inch 256☓192 Pixel HARP Image Sensor with Active-matrix HEED" J. Inst. Image and TV Eng. 61 387-392 (2007)(In Japanese). |
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B. Gelloz, T. Shibata, R. Mentek, and N. Koshida: "Pronounced Photonic Effects of High-Pressure Water Vapor Annealing on Nanocrystalline Porous Silicon" Mater. Res. Soc. Symp. Proc. 958 L08.02-07 (2007). |
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B. Gelloz, Y. Coffinier, B. Salhi, N. Koshida, G. Patriarche, and R. Boukherroub: "Synthesis and Optical Properties of Silicon Oxide Nanowires" Mater. Res. Soc. Symp. Proc. 958 L05.10-15 (2007). |
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B. Salhi, B. Gelloz, N. Koshida, G. Patriarche, R. Boukherroub: "Synthesis and photoluminescence properties of silicon nanowires treated by high-pressure water vapor annealing" physica status solidi (a) 204 1302-1306 (2007). |
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B. Gelloz, T. Shibata and N. Koshida: "Stabilization of nano-crystalline porous silicon electroluminescence by high pressure water vapor annealing" physica status solidi (a) 204 2141-2144 (2007). |
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N. Koshida, T. Ohta, and B.Gelloz: "Operation of nanosilicon ballistic electron emitter in liquid water and hydrogen generation effect" Appl. Phys. Lett. 90 163505-07 (2007). |
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T. Ohta, A. Kojima, and N. Koshida: "Emission characteristics of nanocrystalline porous silicon ballistic cold cathode in atmospheric ambience" J. Vac. Sci. Technol. B 25 524-527 (2007). |
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H. Yoshimura and N. Koshida: "Quick response observed in solid-state electrochromic device with an interfacial barrier structure" Jpn. J. Appl. Phys. 45 3479-3481 (2006). |
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B. Gelloz and N. Koshida: "Highly Enhanced Efficiency and Stability of Photo- and Electro- Luminescence of Nano-Crystalline Porous Silicon by High-Pressure Water Vapor Annealing" Jpn. J. Appl. Phys. 45 3462-3465 (2006). |
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B. Gelloz, T. Shibata, and N. Koshida: "Stable electroluminescence of nanocrystalline silicon device activated by high pressure water vapor annealing" Appl. Phys. Lett. 89 191103-05 (2006). |
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T. Kihara, T. Harada, M. Kato, K. Nakano, O. Murakami, T. Kikusui, and N. Koshida: "Reproduction of mouse-pup ultrasonic vocalizations by nanocrystalline silicon thermoacoustic emitter" Appl. Phys. Lett. 88 043902-04 (2006). |
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Y. Watabe, Y. Honda, and N. Koshida: "Tunable output directivity of thermally induced ultrasonic generator based on nanocrystalline porous silicon" Jpn. J. Appl. Phys. 45 7240-7242 (2006). |
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H. Yoshimura and N. Koshida: "Fast electrochromic effect obtained from solid-state inorganic thin film configuration with a carrier accumulation structure" Appl. Phys. Lett. 88 093509-11 (2006). |
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Y. Watabe, Y. Honda, and N. Koshida: "The characteristics of thermally induced ultrasonic emission from nanocrystalline porous silicon device under impulse operation" Jpn. J. Appl. Phys, 45 3645-3647 (2006). |
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K. Tsubaki, T. Komoda and N. Koshida: "Acoustic emission characteristics of nanocrystalline porous silicon device driven as an ultrasonic speaker" Jpn. J. Appl. Phys, 45 3642-3644 (2006). |
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B. Gelloz and N. Koshida: "Highly Enhanced Efficiency and Stability of Photo- and Electro-luminescence of Nano-crystalline Porous Silicon by High-Pressure Water Vapor Annealing" Jpn. J. Appl. Phys, 45 3462-3465 (2006). |
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H. Yoshimura and N. Koshida: "Quick response observed in solid-state electrochromic device with an interfacial barrier structure" Jpn. J. Appl. Phys, 45 3479-3481 (2006). |
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N. Negishi, R. Tanaka, T. Nakada, K. Sakemura, Y. Okuda, H. Satoh, A. Watanabe, T. Yoshikawa, K. Ogasawara, M. Nanba, S. Okazaki, K. Tanioka, N. Egami, and N. Koshida: "Fabrication of active-matrix high-efficiency electron emission device and its application to high-sensitivity image sensing" J. Vac. Sci. Technol. B 24 1021-1025 (2006). |
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B. Gelloz and N. Koshida: "Highly enhanced photoluminescence of as-anodized and Electrochemically oxidized nanocrystalline p-type porous silicon treated by high-pressure water vapor annealing" Thin Solid Films 508 406-409 (2006). |
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T. Kihara, T. Harada and N. Koshida: "Wafer-compatible fabrication and characteristics of nanocrystalline silicon thermally induced ultrasound emitters" Sensors and Actuators A: Physical 125 422-428 (2006). |
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B. Gelloz and N. Koshida: "Mechanism of a remarkable enhancement in the light emission from nanocrystalline porous silicon annealed in high-pressure water vapor" J. Appl. Phys. B 98 123509-15 (2005). |
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T. Ohta, A. Kojima, H. Hirakawa, T. Iwamatsu, and N. Koshida: "Operation of nanocrystalline silicon ballistic emitter in low vacuum and atmospheric pressures" J. Vac. Sci. Technol. B 23 2336-2339 (2005). |
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J. Hirota, A. Kiuchi, and N. Koshida: "Phased array operation of nanocrystalline porous silicon ultrasonic emitters" phys. stat. sol. (c)2 No.9, 3298-3302 (2005). |
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B. Gelloz, H. Sano, R. Boukherroub, D.D.M. Wayner, D.J. Lockwood, and N. Koshida: "Stable electroluminescence from passivated nano-crystalline porous silicon using undecylenic acid" phys. stat. sol. (c)2 No.9, 3273-3277 (2005). |
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B. Gelloz, A. Kojima, and N. Koshida: "Highly efficient and stable luminescence of nanocrystalline porous silicon treated by high-pressure water vapor annealing" Appl. Phys. Lett. 87, 031107-3 (2005). |
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Akira Kojima and Nobuyoshi Koshida: "Ballistic transport mode detected by picosecond time-of-flight measurements for nanocrystalline porous silicon layer" Appl. Phys. Lett. 86, 022102 (2005). |
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S. Uno, N. Mori, K. Nakazato, N. Koshida, and H. Mizuta: "Reduction of acoustic-phonon deformation potential in one-dimensional array of Si quantum dot interconnected with tunnel oxides" J. Appl. Phys. 97, 113506-11 (2005). |
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S. Uno, N. Mori, K. Nakazato, N. Koshida, and H. Mizuta: "Theoretical investigation of electron-phonon teraction in one-dimensional silicon quantum dot array interconnected with silicon oxide layers" Phys. Rev. B72, 035337-11 (2005). |
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K. Tsubaki, H. Yamanaka, K. Kitada, T. Komoda and N. Koshida: "Three-dimensional Image Sensing in Air by Thermally Induced Ultrasonic Emitter Based on Nanocrystalline Porous Silicon" Jpn. J. Appl. Phys. 44 4436-4439 (2005). |
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T. Kihara, T. Harada, and N. Koshida: "Precise Thermal Characterization of Confined Nanocrystalline Silicon by a 3ω Method" Jpn. J. Appl. Phys. 44 4084-4087 (2005). |
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B. Gelloz, A. Kojima and N. Koshida: "Improved optoelectronic characteristics of nanocrystalline porous silicon by high-pressure water vapor annealing" Mater. Res. Soc. Symp. Proc. 832, 141-146 (2005). |
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K. Tsubaki, T. Komoda and N. Koshida: "Enhancing the sound pressure of thermally induced ultrasonic emitter based on nanocrystalline porous silicon" Mater. Res. Soc. Symp. Proc. 832, 195-200 (2005). |
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Y. Tsuchiya, T. Nakatsukasa, H. Mizuta, S. Oda, A. Kojima, and N. Koshida: "Quasiballistic electron emission from planarized nanocrystalline-Si Cold Cathode" Mater. Res. Soc. Symp. Proc. 832 189-194 (2005). |
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A. Kiuchi, B. Gelloz, A. Kojima, and N. Koshida: "Possible operation of periodically layered anocrystalline porous silicon as an acoustic band crystal device" Mater. Res. Soc. Symp. Proc. 832, 207-212 (2005). |
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B. Gelloz, T. Kanda, T. Uchida, M. Niibe,A. Kojima and N. Koshida: "Electroluminescence Enhancement Assisted with Ballistic Electron Excitation in Nanocrystalline Silicon Diodes" Jpn. J. Appl. Phys, 44, 2676-2679 (2005). |
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A. Kiuchi and N. Koshida: "New Operating Mode of Nanocrystalline Silicon Ultrasonic Emitters for Use as Audio Speakers" Jpn. J. Appl. Phys, 44, 2634-2636 (2005). |
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T. Komoda, T. Ichihara, Y. Honda, T. Hatai, T. Baba, Y. Takegawa, Y. Watabe, K. Aizawa, V. Vezin, and N. Koshida: "Fabrication of a 7.6-in-diagonal prototype ballistic electron surface-emitting display on a glass substrate" Journal of the Society for Information Display, 12, 29-35 (2004). |
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T.Ichihara, Y. Honda, T. Baba, T. Komoda, and N. Koshida: "Annealing effects on the operation stability of ballistic electron emission from electrochemically oxidized nanocrystalline silicon diodes" J. Vac. Sci. Technol. B 22, 1784 (2004). |
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N. Koshida: "2.映像・音響技術におけるナノテクノロジー" 映像情報メディア学会誌, 58; No.9 (2004) 1196-1200（in jpn.). |
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T. Kihara, T. Harada, J. Hirota and N. Koshida: "Ultrasound Emisson Characteristics of a Thermally Induced Sound Emitter Employing a Nanocrystalline Silicon Layer" Jpn. J. Appl. Phys., 43 No.5B (2004) 2973-2975. |
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T. Ichihara, T. Baba, T. Komoda and N. Koshida: "Correlation between nanostructure and electron emission characteristics of a ballistic electron surface-emitting device" J. Vac. Sci. Technol. B, 22 (3) (2004) 1372- 1376. |
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K. Sakemura, N. Negishi, T. Yamada, H. Satoh, A. Watanabe, T. Yoshikawa, K. Ogasawara and N. Koshida: "Development of an advanced high efficiency electro-emission device" J. Vac. Sci. Technol. B, 22 (3) (2004) 1367- 1371. |
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B. Gelloz and N. Koshida: "High Performance Electroluminescence from Nanocrystalline Silicon with Carbon Buffer" Jpn. J. Appl. Phys, 43(2004) 1981-1985. |
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J. Hirota, H. Shinoda and N. Koshida: "Generation of Radiation Pressure in Thermally Induced Ultrasonic Emitter Based on Nanocrystalline Silicon" Jpn. J. Appl. Phys, 43(2004) 2080-2082. |
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Y. Nakajima, T. Uchida, H. Toyama, A. Kojima, B. Gelloz and N. Koshida: "A Solid-State Multicolor Light-Emitting Device Based on Ballistic Electron Excitation" Jpn. J. Appl. Phys, 43(2004) 2076-2079. |
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N. Koshida: "量子サイズナノシリコンの機能と応用＊光・電子・音波の放出素子を中心に＊" パリティ、19(2004) 14-19（in jpn.). |
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T. Ichihara, T.Hatai, K. Aizawa, T. Komoda, A. Kojima, and N. Koshida: "Key role of nanocrystalline feature in porous polycrystalline silicon diodes for efficient ballistic electron emission" J. Vac. Sci. Technol. B, 22(1) (2004) 57-59. |
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N. Koshida: "光・電子・音を出すシリコンナノ粒子＊量子サイズ化によるシリコンテクノロジーの展開＊" 学術月報、57(2004)176-180（in jpn). |
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S. Uno, K. Nakazato, S. Yamaguchi,
A. Kojima,
N. Koshida, and H. Mizuta: "New insights in high-energy electron emission and underlying transport physics of nanocrystalline Si" IEEE Trans. Nanotechnology 3(4) (2004) (in press). |
|
B. Gelloz,
H. Sano,
R. Boukherroub,
D.D.M. Wayner,
D.J. Lockwood, and N. Koshida: "Stabilization of porous silicon electroluminescence by surface passivation with controlled covalent bonds" Appl. Phys. Lett. 83(2003) 2342-2344. |
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N. Koshida and N. Matsumoto: "Fabrication and quantum properties of nanostructured silicon" Materials Science and Engineering R 40(2003) 169-205. |
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N.Koshida,
B.Gelloz,
A. Kojima,
T.Migita,
Y. Nakajima,
T.Kihara,
T.Ichihara,
Y.Watabe, and T.Komoda: "Photon, Electron and Utlrasonic Emission from Nanocrystalline Porous Silicon Devices" JMat. Res. Soc. Symp. Proc. 737(2003) 801-812. |
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B. Gelloz,
A. Bsiesy, and R. Herino: "Electrically induced luminescence quenching in p+-type and anodically oxidized n-type wet porous silicon" J. Appl. Phys. 94, 2381-2389 (2003). |
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B. Gelloz and N. Koshida: "Effects of Amorphous Carbon Films on the Performance of Porous Silicon Electroluminescence" Mater. Res. Soc. Symp. Proc. 737(2003) 581-586. |
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A. Kojima, and N. Koshida: "An Analysis of Electron Transport in Surface-Passivated Nanocrystalline Porous Silicon" Jpn. J. Appl. Phys. 42(2003) 2395-2398. |
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Y. Nakajima,
H. Toyama,
T. Uchida,
A. Kojima, and N. Koshida: "Characteristics of Light Emission by Ballistic Electron Excitation in Nanocrystalline Silicon device Formed on a p-Type Substrate" Jpn. J. Appl. Phys. 42(2003) 2412-2414. |
|
T. Komoda,
Y. Honda,
T. Ichihara,
T. Hatai,
Y. Watabe,
K. Aizawa, and N. Koshida: "Demonstration of a possibility for a large panel BSD (Ballistic Electron Surface-Emitting Display) by fabricating 7.6 inches diagonal prototype model" Society for Information Display 2002 Int. Symp., Digest of Technical Papers, 34(SID, San Jose, 2003). 910-913. |
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B. Gelloz,
A. Halimaoui,
Y. Campidelli,
A. Bsiesy,
N. Koshida, and R. Herino: "Anodic oxidation of p+-type porous silicon having pores uniformly covered with Ge" phys. stat. sol. (a) 197(2003) 123-127. |
|
Y. Nakajima,
H. Toyama,
A. Kojima, and N. Koshida: "A solid-state light-emitting device based on ballistic electron excitation using an inorganic material as a fluorescent film" phys. stat. sol. (a) 197(2003) 316-320. |
|
A. Kojima and N. Koshida: "A Monte-Carlo simulation of ballistic transport in nanocrystalline silicon diode" phys. stat. sol. (a) 197(2003) 452-457. |
|
Y. Osaka,
K. Kohno,
H. Mizuno, and N. Koshida: "Physical properties of SiO2-doped Si films and electroluminescence in metal/SiO2-doped Si/p-Si diodes" Jpn. J. Appl. Phys. 41(2002) 7481-7486. |
|
Y. Nakajima,
A. Kojima, and N. Koshida: "Generation of ballistic electrons in nanocrystalline porous silicon layers and its application to a solid-state planar luminescent device" Appl. Phys. Letters 81(2002) 2472-2474. |
|
K. Yamada,
K. Goto,
Y. Nakajima,
N. Koshida, and H. Shinoda: "Wire-Free Tactile Sensing Element based on Optical Connection" Proc. 19th Sensor Symposium (2002) 433-436. |
|
K. Yamada,
K. Goto,
Y. Nakajima,
N. Koshida, and H. Shinoda: "A Sensor Skin using Wire-Free Tactile Sensing Elements based on Optical Connection", Proc. 19th Sensor Symposium (2002) 319-322. |
|
T. Komoda,
Y. Honda,
T. Ichihara,
T. Hatai,
Y. Takegawa,
Y. Watabe, and K. Aizawa: "Development of a Low Temperature Process of Ballistic Electron Surface-Emitting Display (BSD) on a Glass Substrate" Society for Information Display 2002 Int. Symp. Digest of Technical Papers, 33, No.2, (SID, San Jose, 2002) 1128-1131 |
|
N. Asamura,
U. K. Saman Keerthi,
T. Migita,
N. Koshida, and H. Shinoda: "Intensifying Thermally Induced Ultrasound Emission", Proc. 19th Sensor Symposium (IEEJ, Tokyo, 2002) 477-482. |
|
T. Ichihara,
Y. Honda,
K. Aizawa
T. Komoda and N. Koshida: "Development of ballistic electron cold cathode by a low temperature processing of polycrystalline silicon films" J. Crystal Growth Special Issue 237-239 (2002) 1915-1919. |
|
Y. Nakajima,
A. Kojima, and N. Koshida: "A solid-state light-emitting device based on excitation of ballistic electrons generated in nanocrystalline porous poly-silicon films" Jpn. J. Appl. Phys. 41(2002) 2707-2709. |
|
T. Migita and N. Koshida: "Transient and stationary characteristics of thermally induced ultrasonic emission from nanocrystalline porous silicon" Jpn. J. Appl. Phys. 41 (2002) 2588-2590. |
|
N. Koshida: "Multifunctional properties of nanocrystalline porous silicon as a quantum-confined material (Invited)" Mater. Sci. & Eng. C724 (2002) 285-289 . |
|
K. Yamada,
K. Goto,
Y. Nakajima,
N. Koshida, and H. Shinoda: "Wire-Free Tactile Sensing Element based on Optical Connection", Proc. 19th Sensor Symposium (2002) (in press). |
|
N. Asamura,
U. K. Saman Keerthi,
T. Migita,
N. Koshida, and H. Shinoda: "Intensifying Thermally Induced Ultrasound Emission" Proc. 19th Sensor Symposium (IEEJ, Tokyo, 2002) in press |
|
N. Koshida,
J. Kadokura,
B. Gelloz,
R. Boukherroub,
D. Wayner, and D. Lockwood: "Electroluminescence Stabilization of Nanocrystalline Porous Silicon Diodes" Int. Symp. Proc. Elecrochem. Soc., Philadelphia, 2002 (in press). |
|
X. Sheng,
A. Kojima,
T. Komoda, and N. Koshida: "Efficient and ballistic cold electron emission from porous polycrystalline silicon diodes with a porosity multilayer structure" JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY B MICROELECTRONICS AND NANOMETER STRUCTURE 19; PART 1 (2001) 64-67 . |
|
A. Kojima and N. Koshida: "Evidence of enlarged drift length in nanocrystalline porous silicon layers by time-of-flight measurements" Jpn. J. Appl. Phys. 40 (2001) 366-368 . |
|
N. Koshida,
J. Kadokura,
M. Takahashi, and K. Imai: "Stabilization of Porous Silicon Electroluminescence by Surface Capping with Silicon Dioxide Films" Mat. Res. Soc. Symp. Proc. 638 (2001) F18.3.1.-F.18.3.6. |
|
Y. Toriumi,
M. Takahashi, and N. Koshida: "A Significant Change in Refractive Index of Nanocrystalline Porous Silicon Induced by Carrier Injection" Mat. Res. Soc. Symp. Proc. 638 (2001) F8.3.1.-F.18.3.6. |
|
Y. Nakajima,
A. Kojima, and N. Koshida: "A Novel Solid-State Light-Emitting Device Based on Ballistic Electron Excitation" Mat. Res. Soc. Symp. Proc. 638 (2001) F4.2.1.-F4.2.6. |
|
A. Kojima,
X. Sheng, and N. Koshida: "Analyses of Ballistic Electron Transport in Nanocrystalline Porous Silicon" Mat. Res. Soc. Symp. Proc. 638 (2001) F3.3.1.-F.3.3.6. |
|
T. Komoda,
T. Ichihara,
Y. Honda,
K. Aizawa, and N. Koshida: "Ballistic Electron Surface-Emitting Cold Cathode by Porous Polycrystalline Silicon Film Formed on Glass Substrare" Mat. Res. Soc. Symp. Proc. 638 (2001) F4.1.1.-F.4.1.12. |
|
T. Komoda,
Y. Honda,
T. Hatai,
Y. Watabe,
T. Ichihara,
K.Aizawa, and N. Koshida: "Fabrication of Ballistic Electron Surface-Emitting Display on Glass Substrates (Invited)" Society of Information Display, Digest of Technical Papers 32 (2001) 188-191. |
|
M. Takahashi,
Y. Toriumi,
T. Matsumoto,
Y. Masumoto and N. Koshida: "Significant photoinduced refractive index change observed in porous silicon Fabry-Perot resonators." Appl. Phys. Lett. 76 (2000) 1990-1992. |
|
B. Gelloz and N. Koshida: "Electroluminescence with high and stable quantum efficiency and low threshold voltage from anodically oxidized thin porous silicon diode." J. Appl. Phys. 88(7) (2000) 4391-4324. |
| B. Gelloz , A. Bsiesy and N. Koshida: "Conduction and Luminescent Properties of Wet Porous Silicon", J. Porous Materials 7 (2000) 103-106. |
|
A. Kumagai ,
Y. Kanegawa ,
Y. Suda and N. Koshida: "Improvement of Porous Si Luminescence Intensity Durability by Nitrogen Ion Irradiation Using an ECR Ion Source" J. Porous Materials 7 (2000) 73-76. |
|
T. Komoda,
Y. Honda,
T. Hatai,
Y. Watabe,
T. Ichihara,
K. Aizawa,
Y. Kondo and N. Koshida : "Matrix flat-panel application of ballistic electron surface-emitting display" Society for Information Display, Digest of Technical Papers 31 (2000) 428-431. |
|
K. Ueno and N. Koshida: "Optical Accessibility of Light-Emissive Nanosilicon Memory" phys. stat. sol. (a) 182 (2000) 579-583. |
|
M. Takahashi,
Y. Toriumi, and N. Koshida: "Current-Induced Optical Effect in Porous Silicon Fabry-Perot Resonators" phys. stat. sol. (a) 182 (2000) 567-571. |
|
K. Ueno and N. Koshida: "Light-emissive nonvolatile memory effects in porous silicon diodes" Appl. Phys. Lett. 74 (1999) 93-95. |
|
N. Koshida ,
X. Sheng and T. Komoda: "Quasiballistic Electron Emission from Porous Silicon Diodes" Appl. Surf. Sci. 146 (1999) 371-376. |
|
N. Koshida and B. Gelloz: Wet and Dry Porous Silicon, Currnet Opinion in Colloid and Interface Science, ed. L. Brus (Elsevier Science, Oxford, 1999) p.p. 309-313. |
|
M. Takahashi and N. Koshida: "Fabrication and characteristics of three-dimensionally buried porous silicon optical waveguides." J. Appl. Phys. 86(9) (1999) 5274-5278. |
|
T. Komoda ,
X. Sheng , N. Koshida: "Mechanism of efficient and stable surface-emitting cold cathode based on porous polycrystalline silicon films." J. Vac. Sci. Technol. B 17(3) (1999) 1076-1079. |
|
N. Koshida,
K. Ueno and X. Sheng: "Field-induced functions of porous Si as a confined system." Journal of Luminescence 80 (1999) 37-42. |
|
H. Mizuno , N. Koshida: "Enhancement in Efficiency and Stability of Oxide-Free Blue Emission from Porous Silicon by Surface Passivation." Mat. Res. Soc. Symp. Proc. 1998 536 (1999) p.p. 179-184. |
|
N. Koshida ,
T. Nakajima,
M. Yoshiyama ,
K. Ueno ,
T. Nakagawa and H. Shinoda: "Ultrasound Emission from Porous Silicon: Efficient Thermo-acoustic Function as a Depleted Nanocrystalline System" Mat. Res. Soc. Symp. Proc. 536 (1999) p.p. 105-110. |
|
B. Gelloz ,
T. Nakagawa and N. Koshida: "Enhancing the External Quantum Efficiency of Porous Silicon Leds Beyond 1% by a Post Anodization Electrochemical Oxidation" Mat. Res. Soc. Symp. Proc. 1998 536 (1999) p.p. 15-20. |
|
H. Shinoda ,
T. Nakajima ,
K. Ueno & N. Koshida: "Thermally induced ultrasonic emission from porous silicon." Nature 400 (1999) 853-855. |
|
M. Takahashi,
Y. Toriumi,
T. Matsumoto,
Y. Masumoto and N. Koshida: "Nonlinear refractive index change in porous silicon Fabry-Perot resonators." Proc. Int. ECS Symp. on Advanced Luminescent Materials and Quantum Confinement, Honolulu 1999.10 PV99-22 (Electrochem. Soc., Pennington, NJ, 1999) p.p. 35-42. |
|
B. Gelloz and N. Koshida: "Enhancing Efficiency and Stability of Electroluminescence of Porous Silicon Using Electrochemical Techniques" Proc. Int. Symp. on Advanced Luminescent Materials and Quantum Confinement, Honolulu 1999. 10 PV99-22 (Electrochem. Soc., Pennington, NJ, 1999) p.p. 27-34. |
|
N. Koshida ,
B. Gelloz ,
X. Sheng ,
K. Ueno and A. Kojima: "Luminescence and Related Novel Functions of Quantum-sized Nanosilicon. (in Japanese)" Technical Report of IEICE LQE99-16 (1999) 1-6. |
|
S. Tanaka,
H. Koyama and N. Koshida: "Photoluminescence decay dynamics of ion-irradiated porous silicon: Evidence for the absence of carrier migration" Appl. Phys. Lett. 73 (1998) 2334-2336. |
|
B. Gelloz,
T. Nakagawa and N. Koshida: "Enhancement of the quantum efficiency and stability of electroluminescence from porous silicon by anodic passivation." Appl. Phys. Lett. 73 (1998) 2021-2023. |
|
H. Koyama ,
Y. Matsushita and N. Koshida: "Activation of blue emission from oxidized porous silicon by annealing in water vapor." J. Appl. Phys. 82 (1998) . |
|
M. Hashimoto,
T. Koreeda and N. Koshida: "Application of dual-functional MoO3/WO3 bilayer resists to focused ion beam nanolithography" J. Vac. Sci. & Technol. B 16(5) (1998) 2767-2771. |
|
X. Sheng ,
H. Koyama and N. Koshida: "Efficient surface-emitting cold cathodes based on electroluminescent porous silicon diodes." J. Vac. Sci. & Technol. B 16 (1998) 793-795. |
|
M. Takahashi,
M. Araki and N. Koshida: "Buried Optical Waveguide of Porous Silicon" Jpn. J. Appl. Phys 37 (1998) L1017-L1019. |
|
T. Nakagawa,
H. Sugiyama and N. Koshida: "Fabrication of Periodic Si Nanostructure by Controlled Anodization" Jpn. J. Appl. Phys. 37(Part 1, No. 12B) (1998) 7186-7189. |
|
K. Ueno and N. Koshida: "Negative-Resistance Effects in Electroluminescent Porous Silicon Diodes." Jpn. J. Appl. Phys. 37 (1998) 1096-1099. |
|
X. Sheng and N. Koshida: "Quasi-ballistic Stable Electron Emission from Porous Silicon Cold Cathodes" Mat. Res. Soc. Symp. Proc. 509 (1998) p.p. 193-198. |
|
N. Koshida ,
E. Takizawa ,
H. Mizuno ,
H. Koyama and T. Sameshima: "Electroluminescent Devices on Polycrystalline Silicon Films for Large-Area Applications" Mat. Res. Soc. Symp. Proc. 486 (1998) p.p. 151-156. |
|
M. Araki ,
M. Takahashi ,
H. Koyama and N. Koshida: "Performances of Porous Silicon Optical Waveguides." Mat. Res. Soc. Symp. Proc. 486 (1998) p.p. 107-112. |
|
T. Matsumoto ,
Y. Masumoto and N. Koshida: "Photo- and Electro-luminescence from Deuterium-Terminated Porous Silicon Diodes" Mat. Res. Soc. Symp. Proc. 486 (1998) p. . |
|
Y. Suda ,
K. Obata and N. Koshida: "Observation of Band Dispersions in Photoluminescent Porous Silicon" Phys. Rev. Lett. 80 (1998) . |
|
T. Matsumoto ,
Y. Masumoto ,
S. Nakashima ,
H. Mimura and N. Koshida: "Coupling effect of surface vibration and quantum confinement carriers in porous silicon." Appl. Surf. Sci. 113/114 (1997) L1089-L1091. |
|
T. Oguro ,
H. Koyama ,
T. Ozaki and N. Koshida: "Mechanism of the visible electroluminescence from metal/porous silicon/n-Si devices." J. Appl. Phys. 81 (1997) 1407-1412. |
|
X. Sheng ,
T. Ozaki ,
H. Koyama and N. Koshida: "Improved cold electron emission characteristics of electroluminescent porous silicon diodes." J. Vac. Sci. & Technol. B 15 (1997) 1661-1665. |
|
T. Matsumoto ,
Y. Masumoto ,
T. Nakagawa ,
M. Hashimoto ,
K. Ueno and N. Koshida: "Electroluminescence from deuterium-terminated porous silicon." Jpn. J. Appl. Phys. 36 (1997) L1089-L109. |
|
K. Ueno ,
H. Koyama and N. Koshida: "Nonlinear electrical functions of porous silicon light-emitting diodes." Mat. Res. Soc. Symp. Proc. 452 (1997) p.p. 699-704. |
|
Y. Suda ,
K. Obata ,
A. Kumagai and N. Koshida: "Roles of surface termination in photoluminescence mechanisms of porous silicon." Mat. Res. Soc. Symp. Proc. 452 (1997) p.p. 455-460. |
|
T. Matsumoto ,
Y. Masumoto and N. Koshida: "Optical properties of deuterium terminated porous silicon." Mat. Res. Soc. Symp. Proc. 452 (1997) p.p. 449-454. |
|
T. Nakagawa,
H. Koyama and N. Koshida: "Effects of External Magnetic Field on the Formation and Optical Properties of Luminescent Porous Silicon." Proc. ECS Int. Symp. on Pits and Pores: Formation, Properties and Significance for Advanced Luminescent Materials, Montreal, Canada 1997 (ECS, Pennington, 1997) p.p. 253-241. |
|
H. Koyama and N. Koshida: "Spectroscopic analysis of blue-green emission from oxidized porous silicon : possible evidence for Si-nanostructure-based mechanism." Solid State Comm. 103 (1997) 37-41. |
|
M. Araki ,
H. Koyama and N . Koshida: "Functional properties of luminescent porous silicon as a component of optoelectronic integration." Superlattices and Microstructures 22 (1997) 365-370. |
|
X. Sheng ,
H. Koyama and N. Koshida: "Emission characteristics of porous silicon cold cathodes." Thin Solid Films 297 (1997) 314-316. |
|
H. Mizuno ,
H. Koyama and N. Koshida: "Photo-assisted continuous tuning of photoluminescence spectra of porous silicon from red to blue." Thin Solid Films 297 (1997) 61-63. |
|
T. Matsumoto ,
A. Masumoto ,
S. Nakajima and N. Koshida: "Luminescence from deuterium-terminated porous silicon." Thin Solid Films 297 (1997) 31-34. |
|
H. Mizuno ,
H. Koyama and N. Koshida: "Oxide-free blue photoluminescence from photochemically etched porous silicon." Appl. Phys. Lett. 69 (1996) 3779-3781. |
|
T. Nakagawa ,
H. Koyama and N. Koshida: "Control of structure and optical anisotropy of luminescent porous silicon by magnetic-field assisted anodization." Appl. Phys. Lett. 69 (1996) 3206-3208. |
|
M. Araki ,
H. Koyama and N. Koshida: "Fabrication and fundamental properties of an edge-emitting device with step-index porous silicon waveguide." Appl. Phys. Lett. 68(21) (1996) 2999-3000. |
|
M. Araki ,
H. Koyama and N. Koshida: "Controlled electroluminescence of porous silicon diodes with a vertical optical cavity." Appl. Phys. Lett. 52 (1996) 2956-2958. |
|
M. Araki ,
H. Koyama and N. Koshida: "Precisely tuned emission from porous silicon vertical optical cavity in the visible region." J. Appl. Phys. 80 (1996) 4841-4844. |
|
Y. Suda ,
T. Koizumi ,
K. Obata ,
Y. Tezuka ,
S. Shin and N. Koshida: "Electronic surface structures and photoluminescence mechanisms of porous Si." J. Electrochem. Soc. 143 (1996) 2502-2507. |
|
M. Araki ,
H. Koyama and N. Koshida: "Optical Cavity Based on Porous Silicon Superlattice Technology." Jpn. J. Appl. Phys. 35(2) (1996) 1041-1044. |
|
M. Hashimoto ,
S. Watanuki and N. Koshida M. Komuro and N. Atoda: "Dual function of thin MoO3 and WO3 films as negative and positive resists for focused ion beam lithography." Jpn. J. Appl. Phys. 35 (1996) 3665-3669. |
|
H. Koizumi ,
Y. Suda and N. Koshida: "Effects of oxidation on electronic states and photoluminescence properties of porous silicon." Jpn. J. Appl. Phys. 35 (1996) L803-L806. |
|
H. Koyama ,
N. Shima and N . Koshida: "Large and irregular shift of photoluminescence excitation spectra observed in photochemically etched porous silicon." Phys. Rev. B 53(20) (1996) R13291-R13294. |
|
H. Tanino ,
A. Kuprin ,
Y. Deai and N. Koshida: "Raman study of free-standing porous silicon." Phys. Rev. B 52 (1996) 1937-1947. |
|
T. Matsumoto ,
M. Daimon ,
H. Mimura ,
Y. Kanemitsu and N. Koshida: "Optically induced absorption in porous silicon and its application to logic gates." J. Electrochem Soc. 142 (1995) 3528-3533. |
|
T. Ozaki ,
T. Oguro ,
H. Koyama and N. Koshida: "The Relationship between Photoconduction Effects and Luminescent Properties of Porous Silicon." Jpn. J. Appl. Phys. 34 (1995) 947-950. |
|
N. Koshida ,
H. Mizuno ,
H. Koyama and G. J. Collins: "Visible Electroluminescence from Porous Silicon Diodes with Immersed Conducting Polymer Contacts." Jpn. J. Appl. Phys. 34(Suppl. 34-1) (1995) 92-94. |
|
N. Koshida ,
T. Ozaki and H. Koyama: "Cold electron emission from electroluminescent porous silicon diodes." Jpn. J. Appl. Phys. 34 (1995) L705-L707. |
|
N. Koshida ,
H. Koyama et al.: "Optoelectronic Effects in Porous Silicon Related to the Visible Luminescence Mechanism." Mat. Res. Soc. Symp. Proc. 358 (1995) 695-700. |
|
H. Koyama and N. Koshida: "Polarization retention of photoluminescence from porous silicon." Phys. Rev. B 52 (1995) 2649-2655. |
|
H. Koyama ,
T. Ozaki , and N. Koshida: "Decay dynamics of the homogeneously-broadened photoluminescence from porous silicon." Phys. Rev. B 52 (1995) R11561-R11564. |
|
N. Koshida: Interrelations between Electrical Properties and Visible Luminescence of Porous Silicon., Porous Silicon Science and Technology, ed. J.C. Vial (Les Ed. de Phys., Marseille, 1995) p.p. 324-328. |
|
M. Araki ,
H. Koyama and N. Koshida: "Precisely tuned optical cavity using porous silicon superlattice structures." Proc Int. Symp. on Advanced Luminescent Materials, Chicago (1995) p.p. 139-145. |
|
X. Sheng ,
T. Ozaki ,
H. Koyama and N. Koshida: "Properties of porous silicon LED as a surface-emitting cold cathode." Proc. Int. Symp. on Advanced Luminescent Materials, Chicago (1995) p.p. 87-93. |
|
H. Koyama ,
T. Oguro and N. Koshida: "Post-anodization filtered illumination of porous silicon in HF solutions to improve the luminescence characteristics." Appl. Phys. Lett. 65 (1994) 1656-1658. |
|
T. Ozaki ,
M. Araki ,
S. Yoshimura ,
H. Koyama and N. Koshida: "Photoelectronic properties of porous Si." J. Appl. Phys. 76 (1994) 1986-1988. |
|
T. Ikeda ,
M. Baba and N. Koshida: "Transition metal oxide resists for electron-beam and focused-ion-beam lithography." J. Photopolym. Sci. & Technol. 7(3) (1994) 585-594. |
|
T. Ban ,
Y. Suda ,
T. Koizumi ,
H. Koyama ,
Y. Tezuka ,
S. Shin and N. Koshida: "Effects of anodization current density on luminescence properties of porous silicon." Jpn. J. Appl. Phys. 33 (1994) 5603-5607. |
|
L. T. Canham and N. Koshida: Silicon-Based Materials for Light Emission., Semiconductor Si/1994, ed. H. Huff, W. Bergholz and K. Sumino (Electrochem. Soc., Pennington, 1994) p.p. 457-459. |
|
N. Koshida,
H. Koyama, Y. Suda et al.: "Optical characterization of porous silicon by synchrotron radiation reflectance spectra analyses." Appl. Phys. Lett. 63(20) (1993) 2774-2776. |
|
N. Koshida ,
H. Koyama ,
Y. Yamamoto and G. Collins: "Visible electroluminescence from porous silicon diodes with an electropolymerized contact." Appl. Phys. Lett. 63(19) (1993) 2655-2657. |
|
Y. Uchida ,
N. Koshida and H. Koyama: "Paramagnetic center in porous silicon : A dangling bond with C3V symmetry." Appl. Phys. Lett. 63(7) (1993) 961-963. |
|
T. Ueno ,
Y. Akiba ,
T. Shinohara ,
H. Koyama ,
N. Koshida and Y. Tarui: "Radiative transition with visible light in electrochemically anodized polycrystalline silicon." Jpn. J. Appl. Phys. 32 (1993) L5-L7. |
|
N. Koshida and H. Koyama: "Optoelecronic characterizations of porous silicon (invited)." MRS Symp. Proc. 283 (1993) p.p. 337-342. |
|
N. Koshida: Optoelectronic Properties of Porous Silicon., Optical Properties of Low Dimensional Silicon Structures, ed. D. Bensahel (Kluwer Acad., Dordrecht, 1993) p.p. 133-138. |
|
N. Koshida and H. Koyama: "Visible electroluminescence from porous silicon." Appl. Phys. Lett. 60(3) (1992) 347-349. |
|
M. Nagasu and N. Koshida: "Photointercalation characteristics of thin WO3 films." J. Appl. Phys. 71 (1992) 398-402. |
|
N. Koshida ,
S. Watanuki ,
K. Yoshida et al.: "Electrical properties of nanometer-width refractory metal line fabricated by focused ion beam and oxide resists." Jpn. J. Appl. Phys. 3 (1992) 4483-4486. |
|
N. Koshida and H. Koyama: "Visible electro- and photoluminescence from porous silicon and its related optoelectronic properties." MRS Symposium Proc. 256 (1992) p.p. 219-222. |
|
N. Koshida and H. Koyama: "Visible photo- and electroluminescent properties of porous silicon." Nanotechnology 3 (1992) 192-195. |
|
N. Koshida ,
Y. Kiuchi and S. Yoshimura: "Photoconduction effects of porous Si in the visible region." Proc. 10th Symp. Photoelectron. Image Devices, London 1991 (IOP Pub., Bristol, 1992) p.p. 377-384. |
|
H. Koyama and N. Koshida: "Photoelectrochemical effects of surface modification of n-type Si with porous layer." J. Electrochem. Soc. 138 254-260 (1991). |
|
N. Koshida, K. Yoshida, S. Watanuki, M. Komuro and N. Atoda: "50 nm metal line fabrication by focused ion beam and oxide resists." Jpn. J. Appl. Phys. 30 3246-3249 (1991) |
|
N. Koshida and N. Hirayama: "Ion implantation induced change in fibrillar morphology of polyacetylene films." Nucl. Instrum. Meth. B 59/60 1292-1294 (1991). |
|
N. Koshida and K. Echizenya:" "Characterization studies of p-type porous Si and its photoelectrochemical activation." J. Electrochem Soc. 138 837-841 (1991). |
|
K. Yoshida, S. Watanuki, N. Koshida, M. Komuro and N. Atoda:" "Focused ion beam lithography with oxide resists and its application to fabrication of fine metallic patterns." Denki Kagaku (J. Electrochem. Soc. Jpn.) 59 614-618 (1991) [in Japanese]. |
|
N. Koshida and H. Koyama: "Efficient visible photoluminescence from porous silicon." Jpn. J. Appl. Phys. 30 L1221-L1223 (1991). |
|
H. Koyama, M. Araki, Y. Yamamoto and N. Koshida: "Visible photoluminescence of porous silicon and its related optical properties." Jpn. J. Appl. Phys. 30 3606-3609 (1991). |
|
N. Koshida and H. Yabumoto: "Effects of ion implantation on the photoelectrochemical properties of TiO2." Nucl. Instrum. Meth. B 59/60 1236-1239 (1991). |
|
N. Koshida and K. Saito: "Work function of a high-Tc superconductor,YBa2Cu3O7." Jpn. J. Appl. Phys. 29 L1635-L1637 (1990). |
|
M. Nagasu and N. Koshida: "Photointercalation effect of thin WO3 films." Appl. Phys. Lett. 57 1325-1326 (1990). |
|
N. Koshida, H. Wachi, K. Yoshida, M. Komuro and N. Atoda: "Focused Ion Beam Fabrication of Fine Metal Structures by Oxide Resists." Jpn. J. Appl. Phys. 29(10) 2299-2302 (1990). |
|
N. Koshida, Y. Ichinose, K. Ohtaka, M. Komuro and N. Atoda: "Microlithographic behavior of transition metal oxide resists exposed to focused ion beam." J. Vac. Sci. Technol. B 8 1093-1096 (1990). |
|
M. Nagasu and N. Koshida: "Photointercalation induced change in optical and electrical properties of thin WO3films", J. TV Engrs. Jpn. 44, 1758-1761 (1990) [in Japanese]. |